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orderin g numbe r : ena1645 bi-cmos ic for polygon mirror motor 3-phase brushless motor driver LV8112V overview the LV8112V is a 3-phase brushless motor driver for polygon mirror motor driving of lbp. a circuit needed to drive of polygon mirror motor can be composed of a single-chip. also, the output transistor is made dmos by using bidc process, and by adopting the synchronous rectification method, the lower power consumption (heat generation) is achieved. features ? 3-phase bipolar drive ? direct pwm drive + sync hronous rectification ? i o max1 = 2.5a ? full complement of on-chip protection circuits, including lock protection, current limiter, under-v oltage protection, and thermal shutdown protection circuits ? i o max1 = 3.0a (t 0.1ms) ? output current control circuit ? circuit to switch slowing down method while stopped (free run or short-circuit brake) ? pll speed control circuit ? constraint protection detection signal switching circuit (fg or ld) ? phase lock detection output (with mask function) ? forward / reverse switching circuit ? compatible with hall fg ? hall bias pin (bias current cut in a stopped state) ? provides a 5v regulator output ? sdcc (speed detection current control) function specifications maximum ratings at ta = 25 c parameter symbol conditions ratings unit v cc max v cc pin 37 v supply voltage vg max vg pin 42 v i o max1 *1 2.5 a output current i o max2 t 0.1ms *1 3.0 a allowable power dissipation pd max mounted on a specified board *2 1.7 w operation temperature topr -25 to +80 c storage temperature tstg -55 to +150 c junction temperature tj max 150 c *1. tj max = 150 c must not be exceeded. *2. specified board: 114.3mm 76 .1mm 1.6mm, glass epoxy board. specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 11310 sy 20091224-s00004 no.a1645-1/13
LV8112V no.a1645-2/13 allowable operating ranges at ta = 25 c parameter symbol conditions ratings unit supply voltage range v cc 10 to 35 v 5v constant voltage output current i reg 0 to -30 ma ld pin applied voltage v ld 0 to 5 v ld pin output current i ld 0 to 15 ma fg pin applied voltage v fg 0 to 5 v fg pin output current i fg 0 to 15 ma hb pin applied voltage v hb 0 to 5 v hb pin output current i hb 0 to -30 ma electrical characteristics at ta = 25 c, v cc = 24v ratings parameter symbol conditions min typ max unit i cc 1 5.5 6.5 ma current drain i cc 2 in a stop state 1.0 1.5 ma 5v constant voltage output output voltage vreg 4.65 5.0 5.35 v line regulation vreg1 v cc = 10 to 35v 20 100 mv load regulation vreg2 i o = -5 to -20ma 25 60 mv temperature coefficient vreg3 design target value * 0 mv/ c output block output on resistance r on i o = 1a , sum of the lower and upper side outputs 1.5 1.9 output leakage current i o leak design target value * 10 a lower side diode forward voltage v d 1 i d = -1a 1.0 1.35 v upper side diode forward voltage v d 2 i d = 1a 1.0 1.35 v charge pump output (vg pin) output voltage vg out v cc +4.9 v cp1 pin output on resistance (high level) v oh (cp1) i cp1 = -2ma 500 700 output on resistance (low level) v ol (cp1) i cp1 = 2ma 300 400 hall amplifier block input bias current i hb (ha) -2 -0.5 a common mode input voltage range v icm 0.5 vreg-2.0 v hall input sensitivity 80 mvp-p hysteresis v in (ha) 15 24 42 mv input voltage l h v slh 12 mv input voltage h l v shl -12 mv hall bias (hb pin) p-channel output output voltage on resistance v ol (hb) i hb = -20ma 20 30 output leakage current i l (hb) v o = 0v 10 a fg amplifier schmitt block (in1) input amplifier gain g fg design target value * 5 times input hysteresis (h l) v shl (fgs) input referred, design target value * 0 mv input hysteresis (l h) v slh (fgs) input referred, design target value * 10 mv hysteresis v fgl input referred, design target value * 10 mv fgfil pin high level output voltage v oh (fgfil) 2.7 3.0 3.3 v low level output voltage v ol (fgfil) 0.75 0.85 0.95 v external capacitor charge current i chg 1 v chg 1 = 1.5v -5 -4 -3 a external capacitor discharge current i chg 2 v chg 2 = 1.5v 3 4 5 a amplitude v(fgfil) 1.95 2.15 2.35 vp-p * design target value, do not measurement. continued on next page.
LV8112V no.a1645-3/13 continued from preceding page. ratings parameter symbol conditions min typ max unit fg output output on resistance v ol (fg) i fg = 7ma 20 30 output leakage current i l (fg) v o = 5v 10 a pwm oscillator high level output voltage v oh (pwm) 2.95 3.2 3.45 v low level output voltage v ol (pwm) 1.3 1.5 1.7 v external capacitor charge current i chg (pwm) v pwm = 2v -90 -70 -50 a oscillation frequency f(pwm) c = 150pf 180 225 270 khz amplitude v(pwm) 1.5 1.7 1.9 vp-p recommended operation frequency range f opr 15 300 khz csd oscillation circuit high level output voltage v oh (csd) 2.7 3.0 3.3 v low level output voltage v ol (csd) 0.8 1.0 1.2 v amplitude v(csd) 1.75 2.0 2.25 vp-p external capacitor charge current i chg 1(csd) v chg 1 = 2.0v -14 -10 -6 a external capacitor discharge current i chg 2(csd) v chg 2 = 2.0v 8 11 14 a oscillation frequency f(csd) c = 0.068 f, design target value * 30 40 50 hz phase comparing output output on resistance (high level) v pdh i oh = -100 a 500 700 output on resistance (low level) v pdl i ol = 100 a 500 700 phase lock detection output output on resistance v ol (ld) i ld = 10ma 20 30 output leakage current i l (ld) v o = 5v 10 a error amplifier block input offset voltage v io (er) design target value * -10 +10 mv input bias current i b (er) -1 +1 a high level output voltage v oh (er) i oh = -100 a ei+0.7 ei+0.85 ei+1.0 v low level output voltage v ol (er) i ol = 100 a ei-1.75 ei-1.6 ei-1.45 v dc bias level v b (er) -5% vreg/2 5% v current control circuit drive gain gdf while phase locked 0.5 0.55 0.6 times current limiter circuit (pins rf and rfs) limiter voltage v rf 0.465 0.515 0.565 v under-voltage protection operation voltage vsd 8.3 8.7 9.1 v hyteresis vsd 0.2 0.35 0.5 v cld circuit external capacitor charge current i cld v cld = 0v -4.5 -3.0 -1.5 a operation voltage v h (cld) 3.25 3.5 3.75 v thermal shutdown operation thermal shutdown operation temperature tsd design target value (junction temperature) 150 175 c. hysteresis tsd design target value (junction temperature) 30 c clk pin external input frequency f i (clk) 0.1 10 khz high level input voltage v ih (clk) 2.0 vreg v low level input voltage v il (clk) 0 1.0 v input open voltage v io (clk) vreg-0.5 vreg v hysteresis v is (clk) 0.2 0.3 0.4 v high level input current i ih (clk) v clk = vreg -10 0 +10 a low level input current i il (clk) v clk = 0v -110 -85 -60 a * design target value, do not measurement. continued on next page.
LV8112V no.a1645-4/13 continued from preceding page. ratings parameter symbol conditions min typ max unit csdsel pin high level input voltage v ih (csd) 2.0 vreg v low level input voltage v il (csd) 0 1.0 v input open voltage v io (csd) vreg-0.5 vreg v high level input current i ih (csd) v csd = vreg -10 0 +10 a low level input current i il (csd) v csd = 0v -110 -85 -60 a s/s pin high level input voltage v ih (ss) 2.0 vreg v low level input voltage v il (ss) 0 1.0 v input open voltage v io (ss) vreg-0.5 vreg v hysteresis v is (ss) 0.2 0.3 0.4 v high level input current i ih (ss) v s/s = vreg -10 0 +10 a low level input current i il (ss) v s/s =0v -110 -85 -60 a brsel pin high level input voltage v ih (brsel) 2.0 vreg v low level input voltge v il (brsel) 0 1.0 v input open voltage v io (brsel) vreg-0.5 vreg v high level input current i ih (brsel) v brsel = vreg -10 0 +10 a low level input current i il (brsel) v brsel = 0v -110 -85 -60 a f/r pin high level input voltage v ih (fr) 2.0 vreg v low level input voltage v il (fr) 0 1.0 v input open voltage v io (fr) vreg-0.5 vreg v high level input current i ih (fr) v f/r = vreg -10 0 +10 a low level input current i il (fr) v f/r = 0v -110 -85 -60 a
LV8112V package dimensions unit : mm (typ) 3333 sanyo : ssop44k(275mil) 15.0 7.6 (3.5) (4.7) 5.6 0.5 0.22 0.2 0.65 (0.68) 0.1 (1.5) 1.7max top view side view side view bottom view 12 2 23 44 -25 0 25 50 80 100 0 2.0 1.5 1.0 0.5 pd max -- ta 1.7 0.95 ambient temperature, ta -- c allowable power dissipation, pd max -- w 75 pin assignment 44 43 42 41 40 39 38 37 29 30 31 32 33 34 35 36 23 24 25 26 27 28 1 clk 2 ld 3 s/s 4 vreg 5 brsel 6 csdsel 7 f/r 8 cld 16 15 14 13 12 11 10 9 22 21 20 19 18 17 csd fg pwm fc fgfil ph pd ei eo toc gnd hb cp2 cp1 vg v cc 1 v cc 2 rfs rf out1 out2 out3 gnd2 sub in3 + in2 + in1 + LV8112V top view no.a1645-5/13
LV8112V block diagram and application circuit example csdsel csd osc brsel s/s f/r count logic ld ld mask clk pll fg filter hall hys amp hb curr lim cntrol circuit logic pwm osc comp cont amp peak hold vreg lvds driver charge pump vreg pd ei eo toc fc ph vreg v cc 1 v cc 2 vg cp1 cp2 v cc out1 out2 out3 gnd2 sub gnd rf rfs hb in1 + in2 + in3 + in1 ? in2 ? in3 ? fgfil fg clk cld ld f/r s/s brsel csd csdsel pwm ld output clk input fg output tsd no.a1645-6/13
LV8112V pin function pin no. pin name function equivalent circuit 1 clk clock input pin (10khz maximum) 1 5k 10k 55k vreg 2 ld phase lock detection output pin. goes on during pll-phase lock. open drain output. 2 vreg 3 s/s start/stop input pin. start with a low-level input. stop with a high-level input or open input 3 5k 10k 55k vreg 4 vreg 5v regulator output pin. (the control circuit power supply) connect a capacitor between this pin and gnd for stabilization. 4 v cc 50 5 brsel brake selection pin. by low level, short-circuit braking when the s/s pin is in a stopped state. (brake for the inspection process) 5 5k 55k vreg 6 csdsel motor constraint protection detection signal selection pin. select fg with low, and ld with high or in an open state. 6 5k 55k vreg continued on next page. no.a1645-7/13
LV8112V continued from preceding page. pin no. pin name function equivalent circuit 7 f/r pin to select forward / reverse. (pin to select sdcc function) 7 5k 55k vreg 8 cld pin to set phase lock signal mask time. connect a capacitor between this pin and gnd. if there is no need for masking, this pin must be left open. 8 500 vreg 2k 9 csd pin for both the constraint protection circuit operation time and the initial reset pulse setting. connect a capacitor between this pin and gnd. if the motor constraint protection circuit is not used, a capacitor and a resistor must be connected in parallel between the csd pin and gnd. 9 500 vreg 10 fg fg schmitt output pin. open drain output. 10 vreg 12 pwm pin to set the oscillation frequency of pwm. connect a capacitor between this pin and gnd. 12 vreg 200 2k 14 fc frequency characteristics correction pin of the current limiter circuit. connect a capacitor between this pin and gnd. 14 vreg 500 110k continued on next page. no.a1645-8/13
LV8112V continued from preceding page. pin no. pin name function equivalent circuit 15 fgfil fg filter pin. when the noise of the fg signal is a problem, connect a capacitor between this pin and gnd for stabilization. 15 vreg 16 ph pin to stabilize the rf waveform. connect a capacitor between this pin and gnd. 16 vreg 500 10k 17 pd phase comparison output pin. the phase error is output by the duty changing of the pulse. 17 vreg 500 18 ei error amplifier input pin. 18 vreg 500 19 eo error amplifier output pin. vreg 100k 19 20 toc torque command voltage input pin. normally, this pin must be connected with the eo pin. 20 vreg 21 gnd ground pin of the control circuit block. continued on next page. no.a1645-9/13
LV8112V continued from preceding page. pin no. pin name function equivalent circuit 22 hb hall element bias current pin. goes on when the s/s pin is in a start state. goes off when the s/s pin is in an stopped state. 22 vreg 23 24 25 26 27 28 in1 + in1 ? in2 + in2 ? in3 + in3 ? hall amplifier input pin. a high level state of logic is recognized when in + > in ? . in reverse case is a low-level state. the input amplitude of 100mvp-p or more (differential) is desirable in the hall sensor inputs. if noise on the hall inputs is a problem, that noise must be excluded by inserting capacitors across the inputs. 25 vreg 500 500 26 24 28 27 23 29 sub frame ground pin. this pin is connected with the gnd2 pin. 30 gnd2 ground pin of the output circuit block. 32 34 36 out3 out2 out1 output pin. as for pwm, duty control is executed on the upper- side fet. 38 rf source pin of output mosfet (lower-side). connect a low resistance (rf) between this pin and gnd. 32 v cc 34 36 38 39 rfs output current detection pin. connect to rf pin. 39 5k vreg 40 v cc 2 power supply pin. connect a capacitor between this pin and gnd for stabilization. 41 v cc 1 power supply pin for control. 42 vg charge pump output pin (power supply for the upper side fet gate). connect a capacitor between this pin and v cc . 43 44 cp1 cp2 pin to connect a capacitor for charge pump. connect a capacitor between cp1 and cp2. v cc 44 500 42 43 100 no.a1645-10/13
LV8112V no.a1645-11/13 3-phase logic truth table (in = ?h? indicates the state where in in + > in ? ) f/r = h f/r = l output in1 in2 in3 in1 in2 in3 out1 out2 out3 h l h l h l l h m h l l l h h l m h h h l l l h m l h l h l h l h h l m l h h h l l h m l l l h h h l m h l s/s pin brsel pin input state mode input state while stopped high or open stop high or open free run low start low short-circuit brake csdsel pin sdcc select input state mode input state mode high or open ld standard f/r = high or open function on low fg standard f/r = low function off LV8112V description 1. speed control circuit this ic can realize a high efficien cy, low-jitter, a stable rotation by adopting the pll speed control method. this the pll circuit compares the phase difference of the ed ge between the clk signal and the fg signal and controls by using the output of error. the fg servo frequency under control becomes congruent with the clk frequency. f fg (servo) = f clk 2. output drive circuit this ic adopts the direct pwm drive method to reduce power loss in the output. the output transistor is always saturated while the transistor is on and adjusts the driving force of the motor by changing the duty that the output transistor is on. the pwm switching of the output is performed by the upper-side output transistor. also, this ic has a parasitic diode of the output dmos as a regeneration route when the pwm switching is off. but, this ic is cut down the fever than the diode re generation by performing synchronous rectification. 3. current limiter circuit this ic limits the (peak) current at the value i = v rf / rf (v rf = 0.515v (typical), rf : current detection resister)). the current limitation operation consists of reducing the pwm output on duty to suppress the current. to prevent malfunction of the current limitation operation wh en the reverse recovery current of diode is detected, the operation has a delay (approximately 300ns). in case of a coil resistance of motor is small or small inductance, since the current change at start-up is fast, there is a possibility th at the current more than specified current is flowed by this delay. it is necessary to set the current increases by the delay. 4. power saving circuit this ic becomes the power saving state of decreasing the cons umption current in the stop st ate. the bias current of the majority circuits is cut in the power saving state. also, 5v regulator output is output in the power saving state. 5. reference clock note that externally-applied clock signal has no noise of chattering. the input circuit has a hysteresis. but, if noise is a problem, that noise must be excluded by inserting capaci tors across the inputs. if clock input goes to the no input state wh en the ic is in the start state, the dr ive is turned off after a few rotation of motor if the motor constrained protection circuit does operate. (clock disconnection protection)
LV8112V no.a1645-12/13 6. pwm frequency the pwm frequency is determined by using a capacitor c (f) connected to the pwm pin. f pwm 1 / (29500 c ) ? 150pf or more f pwm 1 / (32000 c ) ? 100pf or more, less than 150pf the frequency is oscillated at about 225khz when a capacitor of 150pf is connected. the gnd of a capacitor must be placed as close to the control block gnd (gnd pin ) of the ic as possible to reduce influence of the output. 7. hall effect sensor input signals the signal input of the amplitude of hysteresis of 42mv max or more is required in the hall effect sensor inputs. also, an input amplitude of over 100mvp-p is desirable in the hall effect sensor inputs in view of influence of noise. if the output waveform (when the phase changes ) is distorted by noise, that noise must be excluded by inputting capacitors across the inputs. 8. fg signals the hall signal of in1 is used as the fg signal in the ic . if noise is a problem, the no ise of the fg signal can be excluded by inserting a capacito r between the fgfil pin and gnd. note that normal operation becomes impossible if the value of the capacitor is overlarge. also, note that the trouble of noise occurs easily when the position of gnd of a capacitor is incorrect. 9. constraint protection circuit this ic has an on-chip constraint protection circuit to protect the ic and the motor in motor constraint mode. when the csdsel pin is set to the high level or open input, if the ld output remains high (unlocked statement) for a fixed period in the start state, this circuit operates. in the low level setting case, if the fg signal is not switched for a fixed period in the start state, this circuit is operates. also, the upper-side output transistor is turned off while the constraint protection circuit is operating. this time is set by the capacitance of the capacitor attached to the csd pin. the set time (in seconds) is 102 c ( f) when a capacitor of 0.068 f is attached, the protection time becomes about 7.0 seconds. the set time must be set well in advanc e for the motor start-up ti me. when the motor is d ecelerated by switching the clock frequency, this protection circuit is not operated. to clear the motor constrained state, the s/s pin is switched into a stop state or the power must be turned off and reapplied. since the csd pin also functions as the power-on reset pin, if the csd pin were connected directly to ground, the l ogic circuit goes to the reset state and the speed cannot be controlled. therefore, if the motor constraint protection circuit is not used, a resistor of about 220k and a capacitor of about 4700pf must be connected in parallel between the csd pin and gnd. 10. phase lock signals (1) phase lock range this ic has no the speed system counter. the speed error range in the phase lock state is indeterminable only by the characteristics of the ic. ( because the accelerations of the change in fg frequency influences.) when it is necessary to specify for the speed error as a mo tor, the value obtained while the motor is actually operating must be measured. since the speed error occurs easily when the accelerations of fg is la rge, the speed error will be the largest when the ic goes into the lock state during start-up or the unlocked state by switching the clock. (2) phase lock signal mask functions when the ic goes into the lock state during start-up or the unlocked state by switching the clock, the low signal for a short-time by using the hunting when the ic goes into the lock ed state is masked. therefore, the lock signal is output in stable state. but, the mask time duration causes the delay of the lock signal output. the mask time is set by the capacitance of the capacitor attach ed between the cld pin and gnd. the mask time (seconds) is 1.8 c ( f) when a capacitor of 0.1 f is attached, the mask time becomes about 180ms. if the signals should be masked completely, the mask time must be set well in advance. when there is no need for masking, the cld pin must be left open.
LV8112V 11. power supply stabilization since this ic is used in applications that draw large output currents and adopts the drive method by switching, the power-supply line is subject to fluctuations. therefore, capacitors with capacitances adequate to stabilize the power-supply voltage must be connected between the v cc pin and gnd. the ground-side a capacitor must be connected as close to the gnd2 pin of power gnd as possible. if it is impossible to connect a capacitor (electrolytic capacitor) near the pin, the ceramic capacitor of about 0.1 f must be connected as close to the pin as possible. if diodes are inserted in the power-supply line to prevent ic destruction due to reverse power supply connection, since this makes the power-supply voltage even more subject to fluctuations, even larger capacitors will be required. 12. vreg stabilization to stabilize the vreg voltage that is the power supply of the control circuit, connect a capacitor of 0.1 f or more. gnd of the capacitor must be attached as close to th e control block gnd (gnd1 pin) of the ic as possible. 13. error amplifier external components of the error amplifier block must be placed as close to the ic as possi ble to reduce influence of noise. also, these components must be placed as separate from the motor as possible. 14. ic reverse metal to improve heat radiation, the metal part on the reverse of ic is stuck fast to the substrate by using highly-conduction solder. 15. sdcc (speed detection current control) function the sdcc circuit controls the speed detection current. it lim its the current to 87.5% of the specified current to reduce acceleration of the motor when th e rotation of the motor exceed s 95% of its target speed. this enables stabilized phase lock pull-in and minimizes the variation in startup time. the sdcc function is disabled by setting f/r low. it is enabled by setting f/r high or open. notes: if the selected state of sdcc doe s not match the rotational direction of the motor, it is necessary to solve the problem by changing the hall bias. sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of february, 2 009. specifications and information herein are subject to change without notice. this catalog provides information as of january, 2010. specifications and information herein are subject to change without notice. ps no.a1645-13/13

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